Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure

In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a s...

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Autor principal: Peralta-Ramos, J.
Otros Autores: Llois, A.M
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: 2007
Acceso en línea:Registro en Scopus
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Registro en la Biblioteca Digital
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100 1 |a Peralta-Ramos, J. 
245 1 0 |a Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure 
260 |c 2007 
270 1 0 |m Peralta-Ramos, J.; Departamento de Física, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Buenos Aires, Argentina; email: peralta@cnea.gov.ar 
506 |2 openaire  |e Política editorial 
504 |a Tsymbal, E.Y., Mryasov, O.N., LeClair, P.R., (2003) J. Phys.: Condens. Matter, 15, p. 109 
504 |a Tusche, C., (2005) Phys. Rev. Lett., 95, p. 176101 
504 |a Tiusan, C., (2006) J. Phys.: Condens. Matter, 18, p. 941 
504 |a Heiliger, C., (2006) Phys. Rev. B, 73, p. 214441 
504 |a Xia, K., (2002) Phys. Rev. B, 65, p. 220401 
504 |a Eddrief, M., (2006) Phys. Rev. B, 73, p. 115315 
504 |a MacLaren, J.M., (1999) Phys. Rev. B, 59, p. 5470 
504 |a Freyss, M., (2002) Phys. Rev. B, 66, p. 014445 
504 |a Herper, H.C., (2001) Phys. Rev. B, 64, p. 184442 
504 |a Nozaki, T., (2005) Appl. Phys. Lett., 86, p. 082501 
504 |a Zeng, Z.M., (2006) J. Magn. Magn. Mater., 303, p. 219 
504 |a Papaconstantopoulos, D.A., (1986) Handbook of the Band Structure of Elemental Solids, , Plenum Press, New York 
504 |a Eddrief, M., (2002) Appl. Phys. Lett., 81, p. 4553 
504 |a Peralta-Ramos, J., Llois, A.M., (2006) Phys. Rev. B, 73, p. 214422 
504 |a Datta, S., (1999) Electronic Transport in Mesoscopic Systems, , Cambridge University Press, Cambridge 
504 |a Sanvito, S., Lambert, C.J., Jefferson, J.H., Bratkovsky, A.M., (1999) Phys. Rev. B, 59, p. 11936 
520 3 |a In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors spd tight-binding Hamiltonian parametrized to ab initio calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions. © 2007 Elsevier B.V. All rights reserved.  |l eng 
536 |a Detalles de la financiación: Fundación Antorchas, PICT 03-10698, PIP-Conicet 6016 
536 |a Detalles de la financiación: This work was partially funded by UBACyT-X115, Fundación Antorchas, PICT 03-10698 and PIP-Conicet 6016. A.M. Llois belongs to CONICET (Argentina). 
593 |a Departamento de Física, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Buenos Aires, Argentina 
593 |a Departamento de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires, Argentina 
690 1 0 |a DOUBLE TUNNEL JUNCTIONS 
690 1 0 |a FE/ZNSE 
690 1 0 |a INTERFACE STRUCTURE 
690 1 0 |a TUNNELING MAGNETORESISTANCE 
690 1 0 |a DOUBLE TUNNEL JUNCTIONS 
690 1 0 |a INTERFACE STRUCTURE 
690 1 0 |a TIGHT-BINDING HAMILTONIAN 
690 1 0 |a TUNNELING MAGNETORESISTANCE 
690 1 0 |a BAND STRUCTURE 
690 1 0 |a BIAS VOLTAGE 
690 1 0 |a ELECTRONIC STRUCTURE 
690 1 0 |a HAMILTONIANS 
690 1 0 |a INTERFACES (MATERIALS) 
690 1 0 |a MAGNETORESISTANCE 
690 1 0 |a TUNNEL JUNCTIONS 
700 1 |a Llois, A.M. 
773 0 |d 2007  |g v. 398  |h pp. 393-396  |k n. 2  |p Phys B Condens Matter  |x 09214526  |w (AR-BaUEN)CENRE-279  |t Physica B: Condensed Matter 
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