Nonvolatile memory with multilevel switching: A basic model
An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carr...
Guardado en:
| Autor principal: | |
|---|---|
| Otros Autores: | , |
| Formato: | Capítulo de libro |
| Lenguaje: | Inglés |
| Publicado: |
American Physical Society
2004
|
| Acceso en línea: | Registro en Scopus DOI Handle Registro en la Biblioteca Digital |
| Aporte de: | Registro referencial: Solicitar el recurso aquí |
| LEADER | 05007caa a22008417a 4500 | ||
|---|---|---|---|
| 001 | PAPER-4590 | ||
| 003 | AR-BaUEN | ||
| 005 | 20230518203409.0 | ||
| 008 | 190411s2004 xx ||||fo|||| 00| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-2942548117 | |
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 030 | |a PRLTA | ||
| 100 | 1 | |a Rozenberg, M.J. | |
| 245 | 1 | 0 | |a Nonvolatile memory with multilevel switching: A basic model |
| 260 | |b American Physical Society |c 2004 | ||
| 270 | 1 | 0 | |m Rozenberg, M.J.; CPHT, Ecole Polytechnique, 91128 Palaiseau Cedex, France |
| 506 | |2 openaire |e Política editorial | ||
| 504 | |a Ovshinsky, S.R., (1968) Phys. Rev. Lett., 21, p. 1450 | ||
| 504 | |a Terabe, K., (2002) Appl. Phys. Lett., 80, p. 4009 | ||
| 504 | |a Sakamoto, T., (2003) Appl. Phys. Lett., 82, p. 3032 | ||
| 504 | |a Ma, L., (2003) Appl. Phys. Lett., 82, p. 1419 | ||
| 504 | |a Koshida, N., Ueno, K., Sheng, X., (1999) J. Lumin., 80, p. 37 | ||
| 504 | |a Watanabe, Y., (1999) Phys. Rev. B, 59, p. 11257 | ||
| 504 | |a Beck, A., (2000) Appl. Phys. Lett., 77, p. 139 | ||
| 504 | |a Watanabe, Y., (2001) Appl. Phys. Lett., 78, p. 3738 | ||
| 504 | |a A. Sawa et al. (unpublished); Liu, S.Q., Wu, N.J., Ignatiev, A., (2000) Appl. Phys. Lett., 76, p. 2749 | ||
| 504 | |a Liu, S.Q., (2001) MRS Symposia Proceedings No. 648, 648, pp. P3.26.1-8. , Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures Symposium (Materials Research Society, Warrendale, PA) | ||
| 504 | |a Zhuang, W.W., (2002) Technical Digest No. 02CH37358, pp. 193-196. , International Electron Devices Meeting (IEEE, Piscataway, NJ) | ||
| 504 | |a Hsu, S.T., (2003) Non-volatile Semiconductor Memory Workshop, pp. 123-124. , (IEEE, Piscataway, NJ) | ||
| 504 | |a Baikalov, A., (2003) Appl. Phys. Lett., 83, p. 957 | ||
| 504 | |a A. Odagawa et al. (unpublished); Moreo, A., (1999) Science, 283, p. 2034 | ||
| 504 | |a Dagotto, E., (2001) Phys. Rep., 344, p. 1 | ||
| 504 | |a Dagotto, E., (2002) Nanoscale Phase Separation and Colossal Magnetoresistance, , Springer-Verlag, Berlin | ||
| 504 | |a Pan, S.H., (2001) Nature (London), 413, p. 282 | ||
| 504 | |a Sze, S.M., (1981) Physics of Semiconductor Devices, , Wiley, New York | ||
| 504 | |a note; Dietz, G.W., (1995) J. Appl. Phys., 78, p. 6113 | ||
| 504 | |a note; note; note; note; Christen, H.-M., (1994) Phys. Rev. B, 49, p. 12095 | ||
| 504 | |a Imada, M., Fujimori, A., Tokura, Y., (1998) Rev. Mod. Phys., 70, p. 1039 | ||
| 520 | 3 | |a An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carrier transfers occur between top and bottom domains, and the middle one, since the interdomain tunneling amplitudes are higher. The results show that the model captures multilevel switchability of the resistance, its memory retention and hysteretic behavior in the current-voltage curve. |l eng | |
| 593 | |a CPHT, Ecole Polytechnique, 91128 Palaiseau Cedex, France | ||
| 593 | |a Departamento de Física, FCEN, Cd. Universitaria Pabellón I, (1428) Buenos Aires, Argentina | ||
| 593 | |a Correlated Electron Research Center, Natl. Inst. Adv. Indust. Sci./T., Tsukuba 305-8562, Japan | ||
| 690 | 1 | 0 | |a COMPUTER SIMULATION |
| 690 | 1 | 0 | |a ELECTRIC RESISTANCE |
| 690 | 1 | 0 | |a ELECTRODES |
| 690 | 1 | 0 | |a HYSTERESIS |
| 690 | 1 | 0 | |a INTERFACES (MATERIALS) |
| 690 | 1 | 0 | |a MOBILE TELECOMMUNICATION SYSTEMS |
| 690 | 1 | 0 | |a MONTE CARLO METHODS |
| 690 | 1 | 0 | |a NETWORK PROTOCOLS |
| 690 | 1 | 0 | |a PEROVSKITE |
| 690 | 1 | 0 | |a PHASE SEPARATION |
| 690 | 1 | 0 | |a PROBABILITY |
| 690 | 1 | 0 | |a RANDOM ACCESS STORAGE |
| 690 | 1 | 0 | |a SILVER |
| 690 | 1 | 0 | |a SWITCHING |
| 690 | 1 | 0 | |a TERNARY SYSTEMS |
| 690 | 1 | 0 | |a MULTILEVEL SWITCHING |
| 690 | 1 | 0 | |a NONVOLATILE MEMORY (NVM) |
| 690 | 1 | 0 | |a OVONIC UNIFIED MEMORY (OUM) |
| 690 | 1 | 0 | |a RESISTANCE RANDOM ACCESS MEMORY (RRAM) |
| 690 | 1 | 0 | |a NONVOLATILE STORAGE |
| 700 | 1 | |a Inoue, I.H. | |
| 700 | 1 | |a Sánchez, M.J. | |
| 773 | 0 | |d American Physical Society, 2004 |g v. 92 |h pp. 178302-1-178302-4 |k n. 17 |p Phys Rev Lett |x 00319007 |w (AR-BaUEN)CENRE-386 |t Physical Review Letters | |
| 856 | 4 | 1 | |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-2942548117&doi=10.1103%2fPhysRevLett.92.178302&partnerID=40&md5=c87c6c23db4ec97f216bfdd1ab76ee09 |y Registro en Scopus |
| 856 | 4 | 0 | |u https://doi.org/10.1103/PhysRevLett.92.178302 |y DOI |
| 856 | 4 | 0 | |u https://hdl.handle.net/20.500.12110/paper_00319007_v92_n17_p178302_Rozenberg |y Handle |
| 856 | 4 | 0 | |u https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00319007_v92_n17_p178302_Rozenberg |y Registro en la Biblioteca Digital |
| 961 | |a paper_00319007_v92_n17_p178302_Rozenberg |b paper |c PE | ||
| 962 | |a info:eu-repo/semantics/article |a info:ar-repo/semantics/artículo |b info:eu-repo/semantics/publishedVersion | ||
| 963 | |a VARI | ||
| 999 | |c 65543 | ||