Strong electron correlation effects in non-volatile electronic memory devices
We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transi...
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| Otros Autores: | , , , , , , , , |
| Formato: | Acta de conferencia Capítulo de libro |
| Lenguaje: | Inglés |
| Publicado: |
2005
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| Acceso en línea: | Registro en Scopus DOI Handle Registro en la Biblioteca Digital |
| Aporte de: | Registro referencial: Solicitar el recurso aquí |
| LEADER | 12526caa a22012377a 4500 | ||
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| 001 | PAPER-3824 | ||
| 003 | AR-BaUEN | ||
| 005 | 20230518203318.0 | ||
| 008 | 190411s2005 xx ||||fo|||| 10| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-33749388768 | |
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 100 | 1 | |a Inoue, I.H. | |
| 245 | 1 | 0 | |a Strong electron correlation effects in non-volatile electronic memory devices |
| 260 | |c 2005 | ||
| 270 | 1 | 0 | |m Inoue, I.H.; Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan; email: i.inoue@aist.go.jp |
| 506 | |2 openaire |e Política editorial | ||
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| 520 | 3 | |a We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device. © 2005 IEEE. |l eng | |
| 593 | |a Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan | ||
| 593 | |a Research Consortium for Synthetic Nano-Function Materials Project (SYNAF), AIST, Tsukuba, Japan | ||
| 593 | |a Laboratoire de Physique des Solides, CNRS, Université Paris-Sud, France | ||
| 593 | |a Departamento de Física Juan José Giambiagi, FCEN, Universidad de Buenos Aires, Argentina | ||
| 593 | |a Department of Advanced Materials Science, University of Tokyo, Kashiwa, Japan | ||
| 593 | |a Centro Atómico Bariloche, Argentina | ||
| 593 | |a Nanotechnology Research Institute (NRI), AIST, Tsukuba, Japan | ||
| 593 | |a Department of Applied Physics, University of Tokyo, Tokyo, Japan | ||
| 690 | 1 | 0 | |a COMPUTATIONAL METHODS |
| 690 | 1 | 0 | |a ELECTRIC INSULATORS |
| 690 | 1 | 0 | |a ELECTRONIC EQUIPMENT |
| 690 | 1 | 0 | |a INTERFACES (COMPUTER) |
| 690 | 1 | 0 | |a MATHEMATICAL MODELS |
| 690 | 1 | 0 | |a SANDWICH STRUCTURES |
| 690 | 1 | 0 | |a SEMICONDUCTOR MATERIALS |
| 690 | 1 | 0 | |a SWITCHING SYSTEMS |
| 690 | 1 | 0 | |a CORRELATED ELECTRON DEVICES |
| 690 | 1 | 0 | |a DOMAIN-TUNNELING (DT) |
| 690 | 1 | 0 | |a NON VOLATILE MEMORY DEVICES |
| 690 | 1 | 0 | |a SEMICONDUCTOR/METAL INTERFACES |
| 690 | 1 | 0 | |a DATA STORAGE EQUIPMENT |
| 700 | 1 | |a Rozenberg, M.J. | |
| 700 | 1 | |a Yasuda, S. | |
| 700 | 1 | |a Sánchezll, M.J. | |
| 700 | 1 | |a Yamazaki, M. | |
| 700 | 1 | |a Manageo, T. | |
| 700 | 1 | |a Akinaga, H. | |
| 700 | 1 | |a Takagi, H. | |
| 700 | 1 | |a Akoh, H. | |
| 700 | 1 | |a Tokura, Y. | |
| 711 | 2 | |c Dallas, TX |d 7 November 2005 through 10 November 2005 |g Código de la conferencia: 68231 | |
| 773 | 0 | |d 2005 |h pp. 131-136 |p Non-Volatile Mem. Tech. Symp. NVMTS |n 2005 Non-Volatile Memory Technology Symposium, NVMTS05 |t 2005 Non-Volatile Memory Technology Symposium, NVMTS05 | |
| 856 | 4 | 1 | |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-33749388768&doi=10.1109%2fNVMT.2005.1541421&partnerID=40&md5=51b134398c01e26edb45ff2430ed7c29 |y Registro en Scopus |
| 856 | 4 | 0 | |u https://doi.org/10.1109/NVMT.2005.1541421 |y DOI |
| 856 | 4 | 0 | |u https://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue |y Handle |
| 856 | 4 | 0 | |u https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS03824_v_n_p131_Inoue |y Registro en la Biblioteca Digital |
| 961 | |a paper_NIS03824_v_n_p131_Inoue |b paper |c PE | ||
| 962 | |a info:eu-repo/semantics/conferenceObject |a info:ar-repo/semantics/documento de conferencia |b info:eu-repo/semantics/publishedVersion | ||
| 999 | |c 64777 | ||