Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE.
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2012
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| LEADER | 08727caa a22009617a 4500 | ||
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| 001 | PAPER-23467 | ||
| 003 | AR-BaUEN | ||
| 005 | 20250905102341.0 | ||
| 008 | 190411s2012 xx ||||fo|||| 00| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-84865349079 | |
| 030 | |a IETNA | ||
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 100 | 1 | |a Quinteros, Cynthia Paula | |
| 245 | 1 | 0 | |a Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation |
| 260 | |c 2012 | ||
| 270 | 1 | 0 | |m Quinteros, C.P.; Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), CNEA, San Martín 1650, Argentina; email: cquinter@tandar.cnea.gov.ar |
| 504 | |a Felix, J.A., Effects of radiation and charge trapping on the reliability of high-k gate dielectrics (2004) Microelectron. Reliab., 44, pp. 563-563 | ||
| 504 | |a Ryan, J.T., Lenahan, P.M., Kang, A.Y., Conley Jr., J.F., Bersuker, G., Lysaght, P., Identification of the atomic scale defects involved in radiation damage in HfO 2 based MOS devices (2005) IEEE Transactions on Nuclear Science, 52 (6), pp. 2272-2275. , DOI 10.1109/TNS.2005.860665 | ||
| 504 | |a Palumbo, F., Soft breakdown in irradiated high-K nanolaminates (2011) Microelectron. Eng., 88, pp. 1425-1427 | ||
| 504 | |a Campabadal, F., Electrical characteristics ofMIS structures with ALD Al O , HfO and Nanolaminates on different silicon substrates (2011) J. Vac. Sci. Technol. B, 29 (1), pp. 01AA07-01AA07 | ||
| 504 | |a Chowdhury, N.A., Charge trapping at deep states in Hf-Silicate based high-K gate dielectrics (2007) J. Electrochem. Soc., 154 (2 G), pp. 30-37 | ||
| 504 | |a Reimbold, G., Mitard, J., Garros, X., Leroux, C., Ghibaudo, G., Martin, F., Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks (2007) Microelectronics Reliability, 47 (4-5 SPEC. ISS.), pp. 489-496. , DOI 10.1016/j.microrel.2007.01.068, PII S0026271407000777 | ||
| 504 | |a Liu, Y., Shanware, A., Colombo, L., Dutton, R., Modeling of charge trapping induced threshold-voltage instability in high-κ gate dielectric FETs (2006) IEEE Electron Device Letters, 27 (6), pp. 489-491. , DOI 10.1109/LED.2006.874760 | ||
| 504 | |a Zheng, X.F., Energy and spatial distributions of electron traps throughout SiO Al O stacks as the IPD in flash memory application (2010) IEEE Trans. Electron Dev., 57 (1), pp. 288-296 | ||
| 504 | |a Cho, M., A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique (2010) Solid-State Electron., 54, pp. 1384-1391 | ||
| 504 | |a Houssa, M., Pantisano, L., Ragnarsson, L.-A., Degraeve, R., Schram, T., Pourtois, G., De Gendt, S., Heyns, M.M., Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions (2006) Materials Science and Engineering R: Reports, 51 (4-6), pp. 37-85. , DOI 10.1016/j.mser.2006.04.001, PII S0927796X06000258 | ||
| 504 | |a (2003) Ann. ICRP, 33 (4) | ||
| 504 | |a Ergin, F.B., Effect of gamma-radiation on HfO based MOS capacitor (2010) Nucl. Instrum. Methods Phys. Res. B, 268, pp. 1482-1485 | ||
| 504 | |a Yilmaz, E., Use of Al O layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate (2008) Nucl. Instrum. Methods Phys. Res. B, 266, pp. 4896-4898 | ||
| 504 | |a Felix, J.A., Radiation-induced charge trapping in thin Al O Si (100) Nt Si gate dielectric stacks (2003) IEEE Trans. Nucl. Sci., 50 (6), pp. 1910-1918 | ||
| 504 | |a McWhorter, P.J., Modeling the anneal of radiation-induced trapped holes in a varying thermal environment (1990) IEEE Trans. Nucl. Sci., 37 (6), pp. 1682-1689 | ||
| 504 | |a Savi, Z., The contribution of border traps to the threshold voltage shift in pMOS dosimetric transistors (1995) IEEE Trans. Nucl. Sci., 42 (4), pp. 1445-1454 | ||
| 504 | |a Xu, Z., A study of relaxation current in high-K dielectric stacks (2004) IEEE Trans. Nucl. Sci., 51 (3), pp. 402-408 | ||
| 504 | |a Snow, E.H., Effects of ionizing radiation on oxidized silicon surfaces and planar devices (1967) Proc.IEEE, 55 (7), pp. 1168-1185 | ||
| 504 | |a Fleta, C., High-energy proton irradiation effects on tunneling MOS capacitors (2004) Microelectron. Eng., 72 (1-4), pp. 85-89 | ||
| 504 | |a Yamaguchi, M., Taylor, S.J., Yang, M.-J., Matsuda, S., Kawasaki, O., Hisamatsu, T., High-energy and high-fluence proton irradiation effects in silicon solar cells (1996) Journal of Applied Physics, 80 (9), pp. 4916-4920 | ||
| 504 | |a Palumbo, F., Miranda, E., Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction (2011) IEEE Trans. Nucl. Sci., 58 (3), pp. 770-775 | ||
| 504 | |a Henson, W.K., Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors (1999) IEEE Electron Devices Lett., 20 (4), pp. 179-181 | ||
| 504 | |a Thangadurai, P., The influence of electron-beam irradiation on electrical characteristics of metal-insulator-semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers (2009) Microelectron. Reliabil., 49, pp. 716-720 | ||
| 504 | |a Mikhelashvili, V., The use of nanolaminates to obtain structurally stable high-k films with superior electrical properties: HfNo-HfTiO (2008) J. Appl. Phys., 103, pp. 114106-114106 | ||
| 504 | |a Ma, T.P., Dressendorfer, P.V., (1989) Ionizing Radiation Effects in MOS Devices & Circuits, , New York: Wiley | ||
| 504 | |a Summers, G.P., Damage correlations in semiconductors exposed to gamma, electron and proton radiations (1993) IEEE Trans. Nucl. Sci., 40 (6), pp. 1372-1379 | ||
| 506 | |2 openaire |e Política editorial | ||
| 520 | 3 | |a MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE. |l eng | |
| 536 | |a Detalles de la financiación: Comisión Sectorial de Investigación Científica | ||
| 536 | |a Detalles de la financiación: Universidad de Buenos Aires, I037 | ||
| 536 | |a Detalles de la financiación: Agencia Nacional de Promoción Científica y Tecnológica | ||
| 536 | |a Detalles de la financiación: Consejo Nacional de Investigaciones Científicas y Técnicas | ||
| 536 | |a Detalles de la financiación: Manuscript received September 16, 2011; revised November 24, 2011; accepted January 23, 2012. Date of publication March 16, 2012; date of current version August 14, 2012. This work was supported in part by the University of Buenos Aires under grant I037, by the CONICET, by the CSIC, and by the ANPCyT. | ||
| 593 | |a Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), CNEA, San Martín 1650, Argentina | ||
| 593 | |a Device Physics Laboratory-Microelectronics, Physics Department, University of Buenos Aires, Buenos Aires, Argentina | ||
| 593 | |a CONICET, San Martín 1650, Argentina | ||
| 593 | |a Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (CSIC), Barcelona, Spain | ||
| 690 | 1 | 0 | |a HIGH-K GATE DIELECTRICS |
| 690 | 1 | 0 | |a MOS DEVICES |
| 690 | 1 | 0 | |a RADIATION EFFECTS |
| 690 | 1 | 0 | |a CAPACITANCE VOLTAGE |
| 690 | 1 | 0 | |a COMPARATIVE ANALYSIS |
| 690 | 1 | 0 | |a GAMMA PHOTONS |
| 690 | 1 | 0 | |a HIGH-K DIELECTRIC |
| 690 | 1 | 0 | |a HIGH-K GATE DIELECTRICS |
| 690 | 1 | 0 | |a NANOLAMINATE |
| 690 | 1 | 0 | |a OXYGEN IONS |
| 690 | 1 | 0 | |a ALUMINA |
| 690 | 1 | 0 | |a HAFNIUM OXIDES |
| 690 | 1 | 0 | |a MOS DEVICES |
| 690 | 1 | 0 | |a RADIATION EFFECTS |
| 690 | 1 | 0 | |a CAPACITANCE |
| 700 | 1 | |a Salomone, L.S. | |
| 700 | 1 | |a Redin, Eduardo Gabriel | |
| 700 | 1 | |a Rafí, J.M. | |
| 700 | 1 | |a Zabala, M. | |
| 700 | 1 | |a Faigón, Adrián Néstor | |
| 700 | 1 | |a Palumbo, Félix Roberto Mario | |
| 700 | 1 | |a Campabadal, Francesca | |
| 773 | 0 | |d 2012 |g v. 59 |h pp. 767-772 |k n. 4 PART 1 |p IEEE Trans Nucl Sci |x 00189499 |w (AR-BaUEN)CENRE-1864 |t IEEE Transactions on Nuclear Science | |
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