Extension of the measurement range of MOS dosimeters using radiation induced charge neutralization

Mostrar otras versiones (1)

This work proposes a new measurement technique to extend the dose range of MOS dosimeters. The technique consists on alternating stages of positive oxide charge buildup with stages of radiation induced charge neutralization, maintaining a uniform sensitivity along the whole measurement. The techniqu...

Descripción completa

Detalles Bibliográficos
Autor principal: Faigón, Adrián Néstor
Otros Autores: Lipovetzky, J., Redin, E., Krusczenski, G.
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: 2008
Acceso en línea:Registro en Scopus
DOI
Handle
Registro en la Biblioteca Digital
Aporte de:Registro referencial: Solicitar el recurso aquí
Biblioteca Central Dr. Luis F. Leloir (FCEN) de Universidad de Buenos Aires
LEADER 09262caa a22009257a 4500
001 PAPER-22346
003 AR-BaUEN
005 20250311104728.0
008 190411s2008 xx ||||fo|||| 00| 0 eng|d
024 7 |2 scopus  |a 2-s2.0-53349101370 
030 |a IETNA 
040 |a Scopus  |b spa  |c AR-BaUEN  |d AR-BaUEN 
100 1 |a Faigón, Adrián Néstor 
245 1 0 |a Extension of the measurement range of MOS dosimeters using radiation induced charge neutralization 
260 |c 2008 
270 1 0 |m Faigón, A.; Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, C1063ACV, Buenos Aires, Argentina; email: afaigon@fi.uba.ar 
504 |a O'Connell, B., Conneely, C., McCarthy, C., Doyle, J., Lane, W., Adams, L., Electrical performance and radiation sensitivity of stacked PMOS dosimeters under bulkbias control (1998) IEEE Trans. Nucl. Sci, 45 (6), pp. 2689-2694. , Dec 
504 |a Sarrabayrouse, G., Buchdahl, D., Polischuk, V., Siskos, S., Stacked-MOS ionizing radiation dosimeters: Potentials and limitations (2004) Rad. Phys. Chem, 71 (3-4), pp. 737-739 
504 |a Price, R.A., Benson, C., Rodgers, K., Development of a RadFET linear array for intracavitary in vivo dosimetry in external beam radiotherapy and brachytherapy (2004) IEEE Trans. Nucl. Sci, 51 (4), pp. 1420-1426. , Aug 
504 |a Ramaseshan, R., Khli, K.S., Zhang, T.J., Lam, T., Norlinger, B., Hallil, A., Islam, M., Performance characteristics of a microMOSFET as an in vivo dosimeter in radiation therapy (2004) Phys. Med Biol, 49, pp. 4031-4048 
504 |a Lavallée, M.C., Gingras, L., Luc, B., Energy and integrated dose dependence of MOSFET dosimeter sensitivity for irradiation energies between 30 kV and 60Co (2006) Med. Phys, 33, pp. 3683-3689 
504 |a Tarr, G., Shortt, K., Wang, Y., Thomson, I., A sensitive, temperature-compensated, zero-bias floating gate MOSFET dosimeter (2004) IEEE Trans. Nucl. Sci, 51 (3), pp. 1277-1282. , Jun 
504 |a Kohno, R., Nishio, T., Miyagishi, T., Hirano, E., Hotta, K., Kawashima, M., Ogino, T., Experimental evaluation of a MOSFET dosimeter for proton dose measurements (2006) Phys. Med. Biol, 51, pp. 6077-6086 
504 |a Kelleher, A., McDonnell, N., O'Neill, B., Lane, W., Adams, L., Investigation into the re-use of PMOS dosimeters (1994) IEEE Trans. Nucl. Sci, 41 (3 PART. 1-2), pp. 445-451. , Jun 
504 |a Sarrabayrouse, G., Polischuk, V., MOS ionizing radiation dosimeters: From low to high dose measurement (2001) Rad. Phys. Chem, 61, pp. 511-513 
504 |a Holmes-Siedle, A., Adams, L., RADFETs: A review of the use of metal-oxide-silicon devices as integrating dosimeters Rad. Phys. Chem, 28 (2), pp. 235-244 
504 |a Scheick, L.Z., McNulty, P.J., Roth, D.R., Dosimetry based on the erasure of floating gates in the natural radiation environments in space (1998) IEEE Trans. Nucl. Sci, 45 (6), pp. 2681-2688. , Dec 
504 |a Jaksic, A., Ristic, G., Pejovic, M., Mohammadzadeh, A., Sudre, C., Lane, W., Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs (2002) IEEE Trans. Nucl. Sci, 49 (3), pp. 1356-1363. , Jun 
504 |a Robinson, R.M., An economic analysis of electron accelerators and cobalt-60 for irradiating food (1989) Tech. Bull, (1762). , USDA 
504 |a Sharp, R.E., Pater, S.L., The use of pMOS dosimeters at megagray total doses (1995) Proc. 3rd Eur. Conf. RADECS, pp. 494-497 
504 |a Boesch, H.R., McLean, F.B., Bennedetto, J.M., McGarrity, J.M., Saturation of the threshold voltage shift in MOSFET's at high total doss (1986) IEEE Trans. Nucl. Sci, 33 (3), pp. 1191-1197. , Jun 
504 |a Asensio, L.J., Carvajal, M.A., Lopez-Villanueva, J.A., Vilches, M., Lallena, A.M., Palma, A.J., Evaluation of a low-cost commercial MOSFET as radiation dosimeter (2006) Sens. Actuators A, (125), pp. 288-295 
504 |a Lipovetzky, J., Redin, E.G., Faigón, A., Electrically erasable metal oxide semiconductor dosimeters (2007) IEEE Trans. Nucl. Sci, 54 (4), pp. 1244-1250. , Aug 
504 |a Vettese, F., Donichak, C., Bourgeault, P., Sarrabayrouse, G., Assessment of a new p-MOSFET usable as a doserate insensitive gamma dose sensor (1996) IEEE Trans. Nucl. Sci, 43 (3), pp. 991-996. , Jun 
504 |a R. G. Fraass et al, Metal nitride oxide semiconductor (MNOS) dosimeter, U.S. Patent: 4,213,045, 1980; Oldham, T.R., Ionizing radiation effects in MOS oxides (1999) Advances in Solid State Electronics and Technology Series, , Singapore: World Scientific 
504 |a Oldham, T.R., McLean, F.B., Total ionizing effects in MOS oxides and devices (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 483-499. , Jun 
504 |a Hughes, H.L., Benedetto, J.M., Radiation effects and hardening of MOS technology: Devices and circuits (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 500-520. , Jun 
504 |a Lee, D.-S., Chan, C.-Y., Oxide charge accumulation in metal oxide semiconductor devices during irradiation (1991) J. Appl. Phys, 69 (10), pp. 7134-7141. , May 
504 |a Fleetwood, D.M., Winokur, P.S., Riewe, L.C., Predicting switched-bias response from steady-state irradiations MOS transistors (1990) IEEE Trans. Nucl. Sci, 37 (6), pp. 1806-1817. , Dec 
504 |a Fleetwood, D.M., Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devices (1990) J. Appl. Phys, 67 (1), pp. 580-583 
504 |a Benson, C., Albadri, A., Joyce, M.J., The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal-oxide-semiconductor field-effect transistor (2006) J. Appl. Phys, 100, p. 044505 
504 |a Fleetwood, D.M., Effects of hydrogen transport and reactions on microelectronics radiation response and reliability (2002) Microelectron. Rel, (42), pp. 523-541 
504 |a Shaneyfelt, M.R., Swank, J.R., Fleetwood, D.M., Field dependence of interface trap buildup in polysilicon and metal gate MOS devices (1990) IEEE Trans. Nucl. Sci, 37 (6), pp. 1632-1639. , Dec 
504 |a Fleetwood, D.M., Shaneyfelt, M.R., Schwank, J., Estimating oxide-trap, interface-trap, and border-trap charge densities in MOS transistors (1994) Appl. Phys. Lett, 64, p. 1965 
504 |a Antognetti, P., Caviglia, D., Profumo, E., CAD model for threshold and subthreshold conduction in MOSFET's (1982) J. Solid State Circ, Sc-17 (3), pp. 454-458 
506 |2 openaire  |e Política editorial 
520 3 |a This work proposes a new measurement technique to extend the dose range of MOS dosimeters. The technique consists on alternating stages of positive oxide charge buildup with stages of radiation induced charge neutralization, maintaining a uniform sensitivity along the whole measurement. The technique was applied with 70 nm MOS dosimeters, extending the dose measurement range from less than a kilogray to more than 675 kGy without showing wear effects. An initial saturation of interface traps creation ensures repeatability in the responses. © 2008 IEEE.  |l eng 
536 |a Detalles de la financiación: Universidad de Buenos Aires, I037 
536 |a Detalles de la financiación: Consejo Nacional de Investigaciones Científicas y Técnicas, PIP 05/06 
536 |a Detalles de la financiación: Manuscript received September 6, 2007; revised January 2, 2008. Current version published September 19, 2008. This work was supported in part by the University of Buenos Aires under Grant I037 and by the CONICET under Grant PIP 05/06. J. Lipovetzky holds a Peruilh Grant. 
593 |a Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, C1063ACV, Buenos Aires, Argentina 
593 |a CONICET, CP C1033AAJ, Cdad. de Buenos Aires, Argentina 
690 1 0 |a DOSIMETRY 
690 1 0 |a GAMMA RAYS 
690 1 0 |a MOS DEVICES 
690 1 0 |a RADIATION EFFECTS 
690 1 0 |a DOSIMETRY 
690 1 0 |a DOSE MEASUREMENTS 
690 1 0 |a DOSE RANGE 
690 1 0 |a GAMMA RAYS 
690 1 0 |a INDUCED CHARGES 
690 1 0 |a INITIAL SATURATION 
690 1 0 |a INTERFACE TRAPPING 
690 1 0 |a MEASUREMENT RANGE 
690 1 0 |a MEASUREMENT TECHNIQUES 
690 1 0 |a MOS DEVICES 
690 1 0 |a POSITIVE OXIDE CHARGE 
690 1 0 |a RADIATION EFFECTS 
690 1 0 |a WEAR EFFECTS 
690 1 0 |a DOSIMETERS 
700 1 |a Lipovetzky, J. 
700 1 |a Redin, E. 
700 1 |a Krusczenski, G. 
773 0 |d 2008  |g v. 55  |h pp. 2141-2147  |k n. 4  |p IEEE Trans Nucl Sci  |x 00189499  |w (AR-BaUEN)CENRE-1864  |t IEEE Transactions on Nuclear Science 
856 4 1 |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-53349101370&doi=10.1109%2fTNS.2008.2000767&partnerID=40&md5=b5606dabf5bfc7ca05bb5a69a0fd4d1b  |x registro  |y Registro en Scopus 
856 4 0 |u https://doi.org/10.1109/TNS.2008.2000767  |x doi  |y DOI 
856 4 0 |u https://hdl.handle.net/20.500.12110/paper_00189499_v55_n4_p2141_Faigon  |x handle  |y Handle 
856 4 0 |u https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v55_n4_p2141_Faigon  |x registro  |y Registro en la Biblioteca Digital 
961 |a paper_00189499_v55_n4_p2141_Faigon  |b paper  |c PE 
962 |a info:eu-repo/semantics/article  |a info:ar-repo/semantics/artículo  |b info:eu-repo/semantics/publishedVersion 

Ejemplares similares