Anderson-Mott transition in a disordered Hubbard chain with correlated hopping

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We study the ground-state phase diagram of the Anderson-Hubbard model with correlated hopping at half-filling in one dimension. The Hamiltonian has a local Coulomb repulsion U and a disorder potential with local energies randomly distributed in the interval (-W,+W) with equal probability, acting on...

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Autor principal: Battista, F.
Otros Autores: Camjayi, A., Arrachea, Liliana del Carmen
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: American Physical Society 2017
Acceso en línea:Registro en Scopus
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100 1 |a Battista, F. 
245 1 0 |a Anderson-Mott transition in a disordered Hubbard chain with correlated hopping 
260 |b American Physical Society  |c 2017 
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506 |2 openaire  |e Política editorial 
520 3 |a We study the ground-state phase diagram of the Anderson-Hubbard model with correlated hopping at half-filling in one dimension. The Hamiltonian has a local Coulomb repulsion U and a disorder potential with local energies randomly distributed in the interval (-W,+W) with equal probability, acting on the singly occupied sites. The hopping process which modifies the number of doubly occupied sites is forbidden. The hopping between nearest-neighbor singly occupied and empty sites or between singly occupied and doubly occupied sites has the same amplitude t. We identify three different phases as functions of the disorder amplitude W and Coulomb interaction strength U>0. When U<4t the system shows a metallic phase: (i) only when no disorder is present W=0 or an Anderson-localized phase, (ii) when disorder is introduced W≠0. When U>4t the Anderson-localized phase survives as long as disorder effects dominate on the interaction effects, otherwise a Mott-insulator phase (iii) arises. Phases (i) and (ii) are characterized by a finite density of doublons and a vanishing charge gap among the ground state and the excited states. Phase (iii) is characterized by the vanishing density of doublons and a finite gap for the charge excitations. © 2017 American Physical Society.  |l eng 
593 |a Departamento de Física, FCEyN, Universidad de Buenos Aires, IFIBA, Pabellón i, Ciudad Universitaria, CABA, 1428, Argentina 
593 |a International Center for Advanced Studies, ECyT-UNSAM, Campus Miguelete, 25 de Mayo y Francia, Buenos Aires, 1650, Argentina 
700 1 |a Camjayi, A. 
700 1 |a Arrachea, Liliana del Carmen 
773 0 |d American Physical Society, 2017  |g v. 96  |k n. 4  |p Phys. Rev. B  |x 24699950  |t Physical Review B 
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856 4 0 |u https://doi.org/10.1103/PhysRevB.96.045413  |y DOI 
856 4 0 |u https://hdl.handle.net/20.500.12110/paper_24699950_v96_n4_p_Battista  |y Handle 
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