BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and st...
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| Formato: | Capítulo de libro |
| Lenguaje: | Inglés |
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Elsevier B.V.
2017
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| Acceso en línea: | Registro en Scopus DOI Handle Registro en la Biblioteca Digital |
| Aporte de: | Registro referencial: Solicitar el recurso aquí |
| LEADER | 10495caa a22010937a 4500 | ||
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| 001 | PAPER-15046 | ||
| 003 | AR-BaUEN | ||
| 005 | 20250924094629.0 | ||
| 008 | 190410s2017 xx ||||fo|||| 00| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-85016149503 | |
| 030 | |a THSFA | ||
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 100 | 1 | |a Román Acevedo, Wilson Stibens | |
| 245 | 1 | 0 | |a BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior |
| 260 | |b Elsevier B.V. |c 2017 | ||
| 270 | 1 | 0 | |m Rubi, D.; Gerencia de Investigación y Aplicaciones, CNEA, Av. Gral Paz 1499 (1650), San Martín, Argentina; email: rubi@tandar.cnea.gov.ar |
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| 506 | |2 openaire |e Política editorial | ||
| 520 | 3 | |a We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and stoichiometry of the films. It is suggested that the small grain size found on our BaTiO3 films destabilizes the structural tetragonal distortion and inhibits the appearance of long-range ferroelectric ordering. We show that even in absence of ferroelectric resistive switching (RS), two different RS mechanisms (metallic filament formation and oxidation/reduction of the Ti top electrode) compete, and can be selected by controlling the films stoichiometry and microstructure. © 2017 Elsevier B.V. |l eng | |
| 536 | |a Detalles de la financiación: Cement Association of Canada | ||
| 536 | |a Detalles de la financiación: Agencia Nacional de Promoción Científica y Tecnológica, PICT 2014-1047 | ||
| 536 | |a Detalles de la financiación: Comisión Nacional de Energía Atómica, Gobierno de Argentina, CNEA | ||
| 536 | |a Detalles de la financiación: Consejo Nacional de Investigaciones Científicas y Técnicas, PIP 291 | ||
| 536 | |a Detalles de la financiación: We acknowledge financial support from CONICET (PIP 291), ANPCYT (PICT 2014-1047) and CIC-Buenos Aires. We thank Dr. D. Vega, from the Laboratory of X-ray Diffraction (GIA, GAIyANN, CAC, CNEA), for the XRD measurements. | ||
| 593 | |a Gereencia de Investigación y Aplicaciones, CNEA, Av. Gral Paz 1499 (1650), San Martín, Buenos Aires, Argentina | ||
| 593 | |a Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina | ||
| 593 | |a Instituto de Química Física de Materiales, Ambiente y Energía (INQUIMAE) and Departamento de Química Inorgánica, Analítica y Química Física, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires, Argentina | ||
| 593 | |a Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete (1650), San Martín, Buenos Aires, Argentina | ||
| 690 | 1 | 0 | |a BATIO3 |
| 690 | 1 | 0 | |a MEMRISTIVE OXIDES |
| 690 | 1 | 0 | |a THIN FILMS ON SILICON |
| 690 | 1 | 0 | |a BARIUM COMPOUNDS |
| 690 | 1 | 0 | |a FERROELECTRIC FILMS |
| 690 | 1 | 0 | |a FERROELECTRICITY |
| 690 | 1 | 0 | |a MEMRISTORS |
| 690 | 1 | 0 | |a MICROSTRUCTURE |
| 690 | 1 | 0 | |a PULSED LASER DEPOSITION |
| 690 | 1 | 0 | |a PULSED LASERS |
| 690 | 1 | 0 | |a SILICON |
| 690 | 1 | 0 | |a STOICHIOMETRY |
| 690 | 1 | 0 | |a BATIO |
| 690 | 1 | 0 | |a FABRICATION AND CHARACTERIZATIONS |
| 690 | 1 | 0 | |a FERROELECTRIC ORDER |
| 690 | 1 | 0 | |a LASER-PULSE ENERGY |
| 690 | 1 | 0 | |a OXIDATION/REDUCTION |
| 690 | 1 | 0 | |a PLATINIZED SILICON |
| 690 | 1 | 0 | |a RESISTIVE SWITCHING |
| 690 | 1 | 0 | |a TETRAGONAL DISTORTION |
| 690 | 1 | 0 | |a THIN FILMS |
| 700 | 1 | |a Rengifo, M. | |
| 700 | 1 | |a Saleh Medina, L.M. | |
| 700 | 1 | |a Reinoso, M. | |
| 700 | 1 | |a Negri, R.M. | |
| 700 | 1 | |a Steren, L.B. | |
| 700 | 1 | |a Rubi, Diego | |
| 773 | 0 | |d Elsevier B.V., 2017 |g v. 628 |h pp. 208-213 |p Thin Solid Films |x 00406090 |w (AR-BaUEN)CENRE-7035 |t Thin Solid Films | |
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| 856 | 4 | 0 | |u https://doi.org/10.1016/j.tsf.2017.03.038 |y DOI |
| 856 | 4 | 0 | |u https://hdl.handle.net/20.500.12110/paper_00406090_v628_n_p208_Roman |y Handle |
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