Resistive switching phenomena in TiOx nanoparticle layers for memory applications

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Electrical characteristics of a Co/ TiOx/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiOx nanoparticle layers were fabri...

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Autor principal: Goren, E.
Otros Autores: Ungureanu, M., Zazpe, R., Rozenberg, M., Hueso, L.E, Stoliar, P., Tsur, Y., Casanova, F.
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: American Institute of Physics Inc. 2014
Acceso en línea:Registro en Scopus
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100 1 |a Goren, E. 
245 1 0 |a Resistive switching phenomena in TiOx nanoparticle layers for memory applications 
260 |b American Institute of Physics Inc.  |c 2014 
270 1 0 |m Goren, E.; RBNI, Chemical Engineering Department, TechnionIsrael 
506 |2 openaire  |e Política editorial 
504 |a Sawa, A., (2008) Mater. Today, 11, pp. 28-36 
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520 3 |a Electrical characteristics of a Co/ TiOx/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiOx nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties. © 2014 AIP Publishing LLC.  |l eng 
593 |a RBNI, Chemical Engineering Department, Technion, Haifa, 3200003, Israel 
593 |a CIC NanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain 
593 |a Laboratoire de Physique des Solides, CNRS UMR 8502, Bât 510, Orsay, 91405, France 
593 |a Departamento de Física and IFIBA-Conicet, FCEyN, Ciudad Universitaria, P.1, Buenos Aires, 1428, Argentina 
593 |a IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48011, Spain 
593 |a ECyT, Universidad Nacional de San Martín, Campus Miguelete, San Martín, 1650, Argentina 
690 1 0 |a MEMORY APPLICATIONS 
690 1 0 |a NANOPARTICLE LAYERS 
690 1 0 |a RESISTIVE SWITCHING 
690 1 0 |a TIO 
700 1 |a Ungureanu, M. 
700 1 |a Zazpe, R. 
700 1 |a Rozenberg, M. 
700 1 |a Hueso, L.E. 
700 1 |a Stoliar, P. 
700 1 |a Tsur, Y. 
700 1 |a Casanova, F. 
773 0 |d American Institute of Physics Inc., 2014  |g v. 105  |k n. 14  |p Appl Phys Lett  |x 00036951  |w (AR-BaUEN)CENRE-346  |t Applied Physics Letters 
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856 4 0 |u https://doi.org/10.1063/1.4897142  |y DOI 
856 4 0 |u https://hdl.handle.net/20.500.12110/paper_00036951_v105_n14_p_Goren  |y Handle 
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962 |a info:eu-repo/semantics/article  |a info:ar-repo/semantics/artículo  |b info:eu-repo/semantics/publishedVersion 
999 |c 75027 

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