Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications /
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic...
Guardado en:
Autor principal: | |
---|---|
Formato: | Libro electrónico |
Lenguaje: | Inglés |
Publicado: |
New Delhi :
Springer India : Imprint: Springer,
2014.
|
Materias: | |
Acceso en línea: | http://dx.doi.org/10.1007/978-81-322-1635-3 |
Aporte de: | Registro referencial: Solicitar el recurso aquí |
Sumario: | The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated. |
---|---|
Descripción Física: | xiv, 134 p. : il. |
ISBN: | 9788132216353 |