Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications /

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic...

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Detalles Bibliográficos
Autor principal: Karmakar, Supriya
Formato: Libro electrónico
Lenguaje:Inglés
Publicado: New Delhi : Springer India : Imprint: Springer, 2014.
Materias:
Electronic circuits.
Nanotechnology.
Engineering.
Microengineering.
Circuits and Systems.
Electronic Circuits and Devices.
Acceso en línea:http://dx.doi.org/10.1007/978-81-322-1635-3
Aporte de:Registro referencial: Solicitar el recurso aquí
Bibliotecas (ING-UNLP) de Universidad Nacional de La Plata
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020 |a 9788132216353 
024 7 |a 10.1007/978-81-322-1635-3  |2 doi 
050 4 |a T174.7 
072 7 |a TDPB  |2 bicssc 
072 7 |a TEC027000  |2 bisacsh 
100 1 |a Karmakar, Supriya.  |9 262101 
245 1 0 |a Novel Three-state Quantum Dot Gate Field Effect Transistor   |h [libro electrónico] : ;   |b Fabrication, Modeling and Applications /  |c by Supriya Karmakar. 
260 1 |a New Delhi :  |b Springer India :  |b Imprint: Springer,  |c 2014. 
300 |a xiv, 134 p. :   |b il. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
505 0 |a Introduction: Multi State Devices and Logic -- Quantum Dot Gate Field Effect Transistor Device Structures -- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization -- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling -- Quantum Dot Gate NMOS Inverter -- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter -- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET) -- Performance in SUB-25nm Range -- Conclusions. 
520 |a The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated. 
650 0 |a Electronic circuits.  |9 259798 
650 0 |a Nanotechnology.  |9 259892 
650 1 4 |a Engineering.  |9 259622 
650 2 4 |a Microengineering.  |9 259893 
650 2 4 |a Circuits and Systems.  |9 259651 
650 2 4 |a Electronic Circuits and Devices.  |9 260105 
776 0 8 |i Printed edition:  |z 9788132216346 
856 4 0 |u http://dx.doi.org/10.1007/978-81-322-1635-3 
912 |a ZDB-2-ENG 
929 |a COM 
942 |c EBK  |6 _ 
950 |a Engineering (Springer-11647) 
999 |a SKV  |c 28266  |d 28266 

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