MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as we...
Guardado en:
| Autor principal: | |
|---|---|
| Otros Autores: | |
| Formato: | Libro electrónico |
| Lenguaje: | Inglés |
| Publicado: |
Cham :
Springer International Publishing : Imprint: Springer,
2014.
|
| Colección: | Analog Circuits and Signal Processing,
122 |
| Materias: | |
| Acceso en línea: | http://dx.doi.org/10.1007/978-3-319-01165-3 |
| Aporte de: | Registro referencial: Solicitar el recurso aquí |
| LEADER | 02970Cam#a22004455i#4500 | ||
|---|---|---|---|
| 001 | INGC-EBK-000206 | ||
| 003 | AR-LpUFI | ||
| 005 | 20220927105717.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 131007s2014 gw | s |||| 0|eng d | ||
| 020 | |a 9783319011653 | ||
| 024 | 7 | |a 10.1007/978-3-319-01165-3 |2 doi | |
| 050 | 4 | |a TK7888.4 | |
| 072 | 7 | |a TJFC |2 bicssc | |
| 072 | 7 | |a TEC008010 |2 bisacsh | |
| 100 | 1 | |a Srivastava, Viranjay M. |9 260432 | |
| 245 | 1 | 0 | |a MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |h [libro electrónico] / |c by Viranjay M. Srivastava, Ghanshyam Singh. |
| 260 | 1 | |a Cham : |b Springer International Publishing : |b Imprint: Springer, |c 2014. | |
| 300 | |a xv, 199 p. : |b il. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a Analog Circuits and Signal Processing, |x 1872-082X ; |v 122 | |
| 505 | 0 | |a Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. | |
| 520 | |a This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·        Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·        Explains the design of RF switches using the technologies presented and simulates switches; ·        Verifies parameters and discusses feasibility of devices and switches. | ||
| 650 | 0 | |a Engineering. |9 259622 | |
| 650 | 0 | |a Semiconductors. |9 259967 | |
| 650 | 0 | |a Electrical engineering. |9 259797 | |
| 650 | 0 | |a Electronic circuits. |9 259798 | |
| 650 | 2 | 4 | |a Circuits and Systems. |9 259651 |
| 650 | 2 | 4 | |a Communications Engineering, Networks. |9 259799 |
| 700 | 1 | |a Singh, Ghanshyam. |9 260433 | |
| 776 | 0 | 8 | |i Printed edition: |z 9783319011646 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1007/978-3-319-01165-3 |
| 912 | |a ZDB-2-ENG | ||
| 929 | |a COM | ||
| 942 | |c EBK |6 _ | ||
| 950 | |a Engineering (Springer-11647) | ||
| 999 | |a SKV |c 27634 |d 27634 | ||