MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as we...

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Detalles Bibliográficos
Autor principal: Srivastava, Viranjay M.
Otros Autores: Singh, Ghanshyam
Formato: Libro electrónico
Lenguaje:Inglés
Publicado: Cham : Springer International Publishing : Imprint: Springer, 2014.
Colección:Analog Circuits and Signal Processing, 122
Materias:
Engineering.
Semiconductors.
Electrical engineering.
Electronic circuits.
Circuits and Systems.
Communications Engineering, Networks.
Acceso en línea:http://dx.doi.org/10.1007/978-3-319-01165-3
Aporte de:Registro referencial: Solicitar el recurso aquí
Bibliotecas (ING-UNLP) de Universidad Nacional de La Plata
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072 7 |a TJFC  |2 bicssc 
072 7 |a TEC008010  |2 bisacsh 
100 1 |a Srivastava, Viranjay M.  |9 260432 
245 1 0 |a MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch   |h [libro electrónico] /   |c by Viranjay M. Srivastava, Ghanshyam Singh. 
260 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2014. 
300 |a xv, 199 p. :   |b il. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Analog Circuits and Signal Processing,  |x 1872-082X ;  |v 122 
505 0 |a Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. 
520 |a This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches. 
650 0 |a Engineering.  |9 259622 
650 0 |a Semiconductors.  |9 259967 
650 0 |a Electrical engineering.  |9 259797 
650 0 |a Electronic circuits.  |9 259798 
650 2 4 |a Circuits and Systems.  |9 259651 
650 2 4 |a Communications Engineering, Networks.  |9 259799 
700 1 |a Singh, Ghanshyam.  |9 260433 
776 0 8 |i Printed edition:  |z 9783319011646 
856 4 0 |u http://dx.doi.org/10.1007/978-3-319-01165-3 
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929 |a COM 
942 |c EBK  |6 _ 
950 |a Engineering (Springer-11647) 
999 |a SKV  |c 27634  |d 27634 

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