Nanopatterning with interferometric lithography using a compact λ = 46.9-nm laser

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We report the imprinting of nanometer-scale gratings by interferometric lithography at λ = 46.9 nm using an Ne-like Ar capillary discharge laser. Gratings with periods as small as 55 nm were imprinted on poly-methyl methacrylate using a Lloyd's mirror interferometer. This first demonstration of...

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Detalles Bibliográficos
Autores principales: Capeluto, M.G., Vaschenko, G., Grisham, M., Marconi, M.C., Ludueña, S., Pietrasanta, L., Lu, Y., Parkinson, B., Menoni, C.S., Rocca, J.J.
Formato: JOUR
Materias:
Nanotechnology
Photolithography
X-ray lasers
X-ray lithography
EUV lasers
Interferometry
Lasers
Pattern recognition
Polymethyl methacrylates
Ultraviolet radiation
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_1536125X_v5_n1_p3_Capeluto
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:We report the imprinting of nanometer-scale gratings by interferometric lithography at λ = 46.9 nm using an Ne-like Ar capillary discharge laser. Gratings with periods as small as 55 nm were imprinted on poly-methyl methacrylate using a Lloyd's mirror interferometer. This first demonstration of nanopatterning using an extreme ultraviolet (EUV) laser illustrates the potential of compact EUV lasers in nanotechnology applications. © 2006 IEEE.

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