Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction

We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acousti...

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Detalles Bibliográficos
Autores principales:	Alcalde, A.M., Romano, C.L., Marques, G.E.
Formato:	JOUR
Materias:	A. Nanostructures A. Semiconductors D. Electron-phonon interactions Computer networks Crystals Deformation Electric conductivity Flow interactions Gallium alloys Indium arsenide Inverse kinematics Modulation Optical waveguides Orbits Piezoelectricity Quantum electronics Semiconductor materials Semiconductor quantum dots Spin-relaxation rates Spin dynamics
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00381098_v148_n5-6_p255_Alcalde
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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