Spin relaxation near the metal-insulator transition: Dominance of the Dresselhaus spin-orbit coupling

We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are sh...

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Detalles Bibliográficos
Autores principales: Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A.
Formato: JOUR
Materias:
Experimental values
Finite size scaling
Hopping terms
Impurity bands
N-doped
Spin relaxation
Spin-orbit couplings
Tight binding model
Zincblende semiconductors
Binding sites
Metal insulator boundaries
Semiconductor insulator boundaries
Metal insulator transition
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00319007_v108_n1_p_Intronati
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches: an analytical diffusive-evolution calculation and a numerical finite-size scaling study of the spin-relaxation time. © 2012 American Physical Society.

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