Extension of the measurement range of MOS dosimeters using radiation induced charge neutralization

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This work proposes a new measurement technique to extend the dose range of MOS dosimeters. The technique consists on alternating stages of positive oxide charge buildup with stages of radiation induced charge neutralization, maintaining a uniform sensitivity along the whole measurement. The techniqu...

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Detalles Bibliográficos
Autores principales: Faigón, A., Lipovetzky, J., Redin, E., Krusczenski, G.
Formato: JOUR
Materias:
Dosimetry
Gamma rays
MOS devices
Radiation effects
Dose measurements
Dose range
Induced charges
Initial saturation
Interface trapping
Measurement range
Measurement techniques
Positive oxide charge
Wear effects
Dosimeters
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00189499_v55_n4_p2141_Faigon
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:This work proposes a new measurement technique to extend the dose range of MOS dosimeters. The technique consists on alternating stages of positive oxide charge buildup with stages of radiation induced charge neutralization, maintaining a uniform sensitivity along the whole measurement. The technique was applied with 70 nm MOS dosimeters, extending the dose measurement range from less than a kilogray to more than 675 kGy without showing wear effects. An initial saturation of interface traps creation ensures repeatability in the responses. © 2008 IEEE.

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