Effect of temperature on the impedance of poly-o-toluidine in 3.7 M H2SO4
The impedance response of poly(o-toluidine) (POT) electrochemically grown films was investigated in sulfuric acid 3.7 M, in the temperature range 218 to 293 K. The Nyquist diagrams as a function of temperature show that the transition potential from the nonconductive to the conductive state shifts i...
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| Autores principales: | , , , |
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| Formato: | JOUR |
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| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_00134651_v146_n7_p2592_Fiorit |
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| Sumario: | The impedance response of poly(o-toluidine) (POT) electrochemically grown films was investigated in sulfuric acid 3.7 M, in the temperature range 218 to 293 K. The Nyquist diagrams as a function of temperature show that the transition potential from the nonconductive to the conductive state shifts in the positive potential direction as the temperature decreases. This implies that, at low temperatures, a greater field is needed to induce the transition. In the nonconductive state both the high-frequency and the low-frequency resistances increase as the temperature is decreased. The Arrhenius plots for both show a break at about 255 K. This is in agreement with the fact that the high-frequency resistance is controlled by ionic movements and that there is charge-transfer control at the polymer/solution interface. In the conductive state the low-frequency capacitance is independent of temperature, showing that the active site concentration does not depend on the temperature. The low-frequency resistance in this potential region also depends on the temperature. No break is observed in the Arrhenius plot for this quantity. However from its slope it is inferred that ionic motions within the polymer control the charge transport in this state. |
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