Transport mechanism through metal-cobaltite interfaces

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The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temper...

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Detalles Bibliográficos
Autores principales: Acha, C., Schulman, A., Boudard, M., Daoudi, K., Tsuchiya, T.
Formato: JOUR
Materias:
Cobalt compounds
Dielectric properties
Ohmic contacts
Organometallics
Circuit modeling
High-resistance state
Insulating phasis
Metal organic deposition
Microscopic description
Resistive switching
Temperature dependence
Transport mechanism
Temperature distribution
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00036951_v109_n1_p_Acha
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties. © 2016 Author(s).

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