Two resistive switching regimes in thin film manganite memory devices on silicon

Mostrar todas las versiones(2)

Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Sim...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Rubi, Diego, Rozenberg, Marcelo Javier, Levy, Pablo Eduardo
Publicado: 2013
Materias:
Compliance current
Drift model
Low costs
On/off ratio
Resistive switching
Resistive switching mechanisms
Compliant mechanisms
Manganese oxide
Oxygen vacancies
Switching systems
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v103_n16_p_Rubi
http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

Ejemplares similares

Ejemplares similares