Two resistive switching regimes in thin film manganite memory devices on silicon

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Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Sim...

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Autores principales:	Rubi, Diego, Rozenberg, Marcelo Javier, Levy, Pablo Eduardo
Publicado:	2013
Materias:	Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v103_n16_p_Rubi http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00036951_v103_n16_p_Rubi
record_format	dspace
spelling	paper:paper_00036951_v103_n16_p_Rubi2025-07-30T17:08:30Z Two resistive switching regimes in thin film manganite memory devices on silicon Rubi, Diego Rozenberg, Marcelo Javier Levy, Pablo Eduardo Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness. © 2013 AIP Publishing LLC. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2013 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v103_n16_p_Rubi http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems
spellingShingle	Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems Rubi, Diego Rozenberg, Marcelo Javier Levy, Pablo Eduardo Two resistive switching regimes in thin film manganite memory devices on silicon
topic_facet	Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems
description	Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness. © 2013 AIP Publishing LLC.
author	Rubi, Diego Rozenberg, Marcelo Javier Levy, Pablo Eduardo
author_facet	Rubi, Diego Rozenberg, Marcelo Javier Levy, Pablo Eduardo
author_sort	Rubi, Diego
title	Two resistive switching regimes in thin film manganite memory devices on silicon
title_short	Two resistive switching regimes in thin film manganite memory devices on silicon
title_full	Two resistive switching regimes in thin film manganite memory devices on silicon
title_fullStr	Two resistive switching regimes in thin film manganite memory devices on silicon
title_full_unstemmed	Two resistive switching regimes in thin film manganite memory devices on silicon
title_sort	two resistive switching regimes in thin film manganite memory devices on silicon
publishDate	2013
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v103_n16_p_Rubi http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi
work_keys_str_mv	AT rubidiego tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT rozenbergmarcelojavier tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT levypabloeduardo tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon
_version_	1840327282697175040

Two resistive switching regimes in thin film manganite memory devices on silicon

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