ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that...

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Detalles Bibliográficos
Autores principales: Golmar, Federico, Villafuerte, M., Mudarra Navarro, Azucena Marisol, Rodríguez Torres, Claudia Elena, Barzola Quiquia, José, Esquinazi, Pablo, Heluani, S. P.
Formato: Articulo Preprint
Lenguaje:Inglés
Publicado: 2010
Materias:
ZnO
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/132494
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Sumario:We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie–Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.