Ellipsometry and electron diffraction study of anodically formed Pd oxide layer

Anodic Pd oxide films grown in l M H<sub>2</sub>SO<sub>4</sub> and l M HClO<sub>4</sub> during the time τ(15s ⩽ τ ⩽ 9000 s) at the potential E<sub>τ</sub>(1.90 V ⩽ E<sub>τ</sub> ⩽ 2.06 V) have been investigated by ellipsometry and electron...

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Autores principales: Bolzán, Agustín Eduardo, Zerbino, Jorge Omar, Macchi, E., Arvia, Alejandro Jorge
Formato: Articulo
Lenguaje:Inglés
Publicado: 1993
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Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/120775
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Sumario:Anodic Pd oxide films grown in l M H<sub>2</sub>SO<sub>4</sub> and l M HClO<sub>4</sub> during the time τ(15s ⩽ τ ⩽ 9000 s) at the potential E<sub>τ</sub>(1.90 V ⩽ E<sub>τ</sub> ⩽ 2.06 V) have been investigated by ellipsometry and electron diffraction techniques. Ellipsometry confirms the duplex structure of the anodic Pd oxide films earlier concluded from electrochemical data. Electron diffraction reveals epitaxial growth of PdO on Pd at early stages. The film thickness fits a logarithmic growth rate equation for oxide layer thicknesses greater than 10–20nm, depending on the solution composition.