Pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered medium

We study a stochastic lattice model for cell colony growth, which takes into account proliferation, diffusion, and rotation of cells, in a culture medium with quenched disorder. The medium is composed both by sites that inhibit any possible change in the internal state of the cells, representing the...

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Autores principales: Moglia, Belén, Albano, Ezequiel Vicente, Guisoni, Nara Cristina
Formato: Articulo Preprint
Lenguaje:Inglés
Publicado: 2016
Materias:
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/100513
https://ri.conicet.gov.ar/11336/47944
https://journals.aps.org/pre/abstract/10.1103/PhysRevE.94.052139
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id I19-R120-10915-100513
record_format dspace
institution Universidad Nacional de La Plata
institution_str I-19
repository_str R-120
collection SEDICI (UNLP)
language Inglés
topic Física
Computer simulation of cell processes
Interface structure and roughness
Computational techniques; simulations
Growth model universality class
spellingShingle Física
Computer simulation of cell processes
Interface structure and roughness
Computational techniques; simulations
Growth model universality class
Moglia, Belén
Albano, Ezequiel Vicente
Guisoni, Nara Cristina
Pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered medium
topic_facet Física
Computer simulation of cell processes
Interface structure and roughness
Computational techniques; simulations
Growth model universality class
description We study a stochastic lattice model for cell colony growth, which takes into account proliferation, diffusion, and rotation of cells, in a culture medium with quenched disorder. The medium is composed both by sites that inhibit any possible change in the internal state of the cells, representing the disorder, as well as by active medium sites, that do not interfere with the cell dynamics. By means of Monte Carlo simulations we find that the velocity of the growing interface, which is taken as the order parameter of the model, strongly depends on the density of active medium sites (ρA). In fact, the model presents a (continuous) second-order pinning-depinning transition at a certain critical value of ρ <sup>crit</sup> A , such as for ρA &gt; ρ<sup>crit</sup A the interface moves freely across the disordered medium, but for ρA &lt; ρ<sup>crit</sup> A the interface becomes irreversible pinned by the disorder. By determining the relevant critical exponents, our study reveals that within the depinned phase the interface can be rationalized in terms of the Kardar-Parisi-Zhang universality class, but when approaching the critical threshold, the non-linear term of the Kardar-Parisi-Zhang equation tends to vanish and then the pinned interface belongs to the quenched Edwards-Wilkinson universality class.
format Articulo
Preprint
author Moglia, Belén
Albano, Ezequiel Vicente
Guisoni, Nara Cristina
author_facet Moglia, Belén
Albano, Ezequiel Vicente
Guisoni, Nara Cristina
author_sort Moglia, Belén
title Pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered medium
title_short Pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered medium
title_full Pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered medium
title_fullStr Pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered medium
title_full_unstemmed Pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered medium
title_sort pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered medium
publishDate 2016
url http://sedici.unlp.edu.ar/handle/10915/100513
https://ri.conicet.gov.ar/11336/47944
https://journals.aps.org/pre/abstract/10.1103/PhysRevE.94.052139
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