Retentivity of RRAM devices based on metal/YBCO interfaces
The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non - volatile memory device. The understanding of the mechanism of the time relaxation process of the information state may be essential to improve their performances. I...
Guardado en:
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| Formato: | Acta de conferencia Capítulo de libro |
| Lenguaje: | Inglés |
| Publicado: |
2011
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| Acceso en línea: | Registro en Scopus DOI Handle Registro en la Biblioteca Digital |
| Aporte de: | Registro referencial: Solicitar el recurso aquí |
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