Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Ã., a 10 ye...

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Detalles Bibliográficos
Autor principal: Franco, Jacopo
Otros Autores: Kaczer, Ben, Groeseneken, Guido
Formato: Libro electrónico
Lenguaje:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2014.
Colección:Springer Series in Advanced Microelectronics, 47
Materias:
Electronic circuits.
Optical materials.
Electronic materials.
Physics.
Semiconductors.
Circuits and Systems.
Electronic Circuits and Devices.
Acceso en línea:http://dx.doi.org/10.1007/978-94-007-7663-0
Aporte de:Registro referencial: Solicitar el recurso aquí
Bibliotecas (ING-UNLP) de Universidad Nacional de La Plata
Tabla de Contenidos:
  • 1 Introduction
  • 2 Degradation mechanisms
  • 3 Techniques and devices
  • 4 Negative Bias Temperature Instability in (Si)Ge pMOSFETs
  • 5 Negative Bias Temperature Instability in nanoscale devices
  • 6 Channel Hot Carriers and other reliability mechanisms
  • 7 Conclusions and perspectives.

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