Poly-SiGe for MEMS-above-CMOS Sensors

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead...

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Detalles Bibliográficos
Autor principal: Gonzalez Ruiz, Pilar
Otros Autores: De Meyer, Kristin, Witvrouw, Ann
Formato: Libro electrónico
Lenguaje:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2014.
Colección:Springer Series in Advanced Microelectronics, 44
Materias:
Electronic circuits.
Nanotechnology.
Optical materials.
Electronic materials.
Materials science.
Physics.
Electronic Circuits and Devices.
Circuits and Systems.
Microengineering.
Characterization and Evaluation of Materials.
Acceso en línea:http://dx.doi.org/10.1007/978-94-007-6799-7
Aporte de:Registro referencial: Solicitar el recurso aquí
Bibliotecas (ING-UNLP) de Universidad Nacional de La Plata
Tabla de Contenidos:
  • Acknowledgements
  • Abstract
  • Symbols and Abbreviations
  • Introduction
  • Poly-SiGe As Piezoresistive Material
  • Design of a Poly-SiGe Piezoresistive Pressure Sensor
  • The Pressure Sensor Fabrication Process
  • Sealing of Surface Micromachined Poly-SiGe Cavities
  • Characterization of Poly-SiGe pressure sensors
  • CMOS Integrated Poly-SiGe Piezoresistive Pressure Sensor
  • Conclusions And Future Work
  • Appendix A
  • Appendix B
  • Appendix C
  • Appendix D.

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