Transport, correlation, and structural defects /

Detalles Bibliográficos
Otros Autores:	Fritzsche, Hellmut
Formato:	Libro
Lenguaje:	Inglés
Publicado:	Singapore ; Teaneck, N.J. : World Scientific, c1990.
Colección:	Advances in disordered semiconductors ; v. 3
Materias:	Semiconductors > Defects. Order-disorder models.
Aporte de:	Registro referencial: Solicitar el recurso aquí Bibliotecas (UNCuyo) de Universidad Nacional de Cuyo

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